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January 15, 1986Journal of Applied Physics

Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP

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GPGernot S. PomrenkeUnited States Air Force Research LaboratoryHEH. EnnenUniversity of StuttgartWHW.H. HaydlFraunhofer Institute for Applied Solid State Physics

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Pomrenke et al. (1986) studied this question.

synapsesocial.com/papers/6a95b3be175ab7812e920b36https://doi.org/10.1063/1.336619
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