This paper presents a new self‐aligned planar oxidation technology (SPOT) developed as an isolation process for obtaining highly uniform planar surfaces in very‐high‐speed bipolar LSI's. In the SPOT isolation process, low temperature (900°C) high pressure (0.8 MPa) oxidation is used. Planarity is found to be independent of the selective oxidation temperature and oxide thickness. Furthermore, no dislocation is generated in this process. A low leakage current vs. high voltage breakdown characteristic is obtained between isolated islands. The results confirm SPOT to be very effective for the low temperature isolation indispensable to realizing very‐high‐speed bipolar large scale integrated circuits (LSI's).
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Sakuma et al. (1987) studied this question.