Reliability tests of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APDs) have been performed by accelerated aging at three different temperatures for the first time. The lifetime of the SL-APDs is estimated to be over 1.0/spl times/10/sup 5/ hours at 50/spl deg/C with a degradation activation energy of 1 eV. These results indicate that the SL-APDs have a reliable lifetime for 2.5-10 Gb/s LAN applications.
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Watanabe et al. (1996) studied this question.
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