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NASICON-structured Na3Zr2Si2PO12 was synthesized by a Sol-Gel approach. Phase-pure samples were successfully sintered at 1050 degrees C when adding 10% excessive Na and P in the precursors, while a small amount of ZrO2 impurity was detected without adding excessive phosphorus. Electrochemical impedance spectrum tests indicate that the ionic conductivity of the former is as high as 5.4x10(-4) S/cm at room temperature, which is higher than that of samples prepared from the precursors without adding excessive phosphorus (3.7x10(-4) S/cm). Further analysis reveals that the evaporation of phosphorus at high temperature would cause the formation of ZrO2 impurity in the samples, leading to a lower ionic conductivity. Compared with solid state reaction approach, samples with enhanced ionic conductivity can be obtained at a rather lower temperature by Sol-Gel synthesis.
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Zhang et al. (2013) studied this question.
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