We report silicon band-edge photoluminescence (PL) with photon energy of 1.1 eV and external quantum efficiency (EQE) better than 10^-3 in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.
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Tsybeskov et al. (1996) studied this question.
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