Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1989Japanese Journal of Applied PhysicsOpen Access

Focused Ion Beam Lithography with Transition Metal Oxide Resists

View Full Paper
Ask AI
Bookmark
Share

Authors

NKNobuyoshi KoshidaHosei UniversityKOKoichi OhtakaRicoh (Japan)MAM. AndoKyushu Institute of Technology

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Koshida et al. (1989) studied this question.

synapsesocial.com/papers/6a95bef262e6e2f2b509e14bhttps://doi.org/10.1143/jjap.28.2090
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1MoO3 Electron Resist and Its Application to Fabrication of Mo Fine Pattern1986 · 14 citations
  2. 2Submicron optical lithography using an inorganic resist/polymer bilevel scheme1980 · 75 citations
  3. 3An inorganic resist for ion beam microfabrication1981 · 27 citations
  4. 4Ion-Beam Modification of Amorphous WO3 Film and Its Properties as a High-Contrast Inorganic Ion Resist1985 · 21 citations
  5. 5Ion beam exposure characteristics of resists: Experimental results1982 · 103 citations