Development of silver sensitized germanium selenide photoresist by reactive sputter etching in SF6

Silver sensitized germanium selenide/polymer bilevel resist system has been used to pattern structures in SiO2 on silicon. Using reactive sputter etching in an SF6 plasma for developing germanium selenide gives superior results compared to CF4 or CHF3 in terms of sensitivity; 500:1, contrast; 7, and sensitivity; 50 mJ/cm2 at 436 nm. By this method 1-μ lines and spaces and 1-μ contact holes have been defined in germanium selenide. These have been transferred into polymer and SiO2 using standard reactive sputter etching with O2 and CHF3, respectively.