The Ag2Se/GeSe inorganic photoresist system has been used to produce submicron features by optical lithography. A practical process incorporating this material is the inorganic resist/polymer bilevel scheme. The successful printing of 0.5 μm lines and spaces is explained by the existence of an ’’edge sharpening’’ effect which accompanies the photo-doping process. Conventionally accepted limitations of photolithography are circumvented by the Ag2Se/GeSe resist, whose properties also include high contrast, resistance to O2 plasma, and high absorbance of UV light.
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Tai et al. (1980) studied this question.