Thin film diodes with Al/a-As2Se2Te/Sb structures were fabricated by vacuum deposition. Al ions were found to diffuse into a-As2Se2Te films below the glass transition temperature. Measurements of ac conductance and capacitance of the diodes revealed that they consist of two layers of different resistivity which correspond to undoped and Al-doped layers. The upward shift of the Fermi level due to Al doping was inferred from the variation of the forward and backward current with time. Accordingly, the p-n junction formed between the undoped p-type layer and the Al doped n--layer is responsible for the rectification.
No takes yet. Share an insight, caveat, or question.
Okano et al. (1985) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: