Laser-assisted wet etching (LAWE) of n-silicon using a 514.5-nm line from a cw argon-ion laser in the presence of hydrofluoric acid is reported. The effects of laser fluence, doping level, and acid concentration on the etch rate are investigated. By LAWE, vias and lines can be rapidly etched with smooth profiles under conditions described.
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Lim et al. (1992) studied this question.
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