A simplified method is introduced to calculate the band bending, the charge densities, and the quantum mechanical fingerprint of the metal-oxide-semiconductor (MOS) capacitor in depletion and inversion. The model features self-consistency of the main quantum mechanical parameters of the system with a low numerical effort in the computation. Example computations are presented, the results of which are close to those obtained from much more complicated, fully self-consistent calculations.
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Mueller et al. (1997) studied this question.
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