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The step structure transition between a regular step and a bunched step structure on Si(111) induced by DC is studied, using a terrace-adatom-step-kink (TASK) model in which the mass transport of Si adatoms is taken into account explicitly. The step structure transformation dynamics were calculated by the dynamical Monte Carlo simulation in the TASK model, and the adatom flux was analyzed by the generalized Burton-Cabrela-Frank (BCF) theory. The step bunching was generated by the step-down directed force in capture-limited regime and by the step-up directed force in diffusion-limited regime. For a regular step structure in the diffusion-limited regime, in-phase wandering of steps was induced by the step-down force.
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Suga et al. (2000) studied this question.
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