Nitrogen-silicon reaction and its influence on the dielectric strength of thermal silicon dioxide

Exposure of silicon to a nitrogen ambient at 1050 °C either before or after oxidation can adversely affect the dielectric strength of thermal oxides. An exposure of 20–30 min and a nitrogen concentration of about 0.1 at% in the silicon can produce such effects. The damaged layer extends for more than 0.13 μm inside the exposed silicon.