An innovative MOS-type field effect transistor was developed for the electrical detection of ferric ions. The sensing assays clearly show a specific detection with a gate–source voltage shift of up to 200 mV and a wide linear detection range (5 × 10−14 to 5 × 10−5 M) associated with good stability, selectivity and reproducibility.
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Duc et al. (2012) studied this question.
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