Designing of low temperature-grown Al x In y O self-mixing layer for flexible RRAM

Flexible non-volatile memory with resistive switching property is an ideal candidate for new type flexible memories. In this work, a spontaneous formed Al x In y O self-mixing layer was fabricated at temperature as low as 150 °C. It was designed to be a resistive switching layer with low formation energy of oxygen vacancies, making the formation and rupture of the oxygen vacancy-based filament easily. As a result, forming-free resistive switching was carried out with stable data retention and low operation voltages, even at small bending radius. Furthermore, resistances and switching voltages showed good uniformity in continuous switching. The designed Al x In y O-based resistive switching random access memory with low process temperature will provide a road leading to low power flexible memories.