Solution processed flexible resistive switching memory based on Al-In-O self-mixing layer

In this work, a solution processed Al-In-O/InOx bilayer resistive switching random access memory (RRAM) is demonstrated at temperature as low as 180 °C. The memory cell exhibits remarkable forming free resistive switching characteristics with stable data retention and low set/reset voltages. More importantly, this solution processed bilayer shows stable memory properties under different bending angles on a flexible substrate. The resistive switching mechanism was systematically investigated. Compared to single layer devices, an Al-In-O mixing layer is induced by the solution process in the bilayer RRAM. The first principle calculation confirms that in the Al-In-O mixing layer, the formation energy of oxygen vacancies is significantly reduced compared with the AlOx layer. As a result, the formation of the oxygen vacancy based conductive filament is realized without the electroforming process. The RRAM fabricated by the printable solution process at low temperature shows great application potential in next generation wearable electronics.