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We report the chemical stability of the hybrid Fe/ZnSe/GaAs heterostructure prepared by molecular-beam epitaxy. Analyses of photoemission spectra show a remarkable chemical stability of the Fe/ZnSe(001) interface up to 380 °C, where the effective disruption of the heterostructure occurs, together with the appearance of Ga atoms near the film surface. This suggests that the ZnSe/GaAs interface is surprisingly less stable than the Fe/ZnSe one.
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Mosca et al. (2001) studied this question.
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