Structure in the conductance of normal metal-insulator-metal junctions at very low bias is explained through a nonequilibrium treatment of the tunneling process. In particular, the related peak in the derivative dσ(V)dV is quantitatively accounted for by the blocking of otherwise available electron tunneling states due to the finite electron relaxation rates in the metal electrodes.
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Trofimenkoff et al. (1972) studied this question.
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