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This work shows that the critical thickness for the two-dimensional–three-dimensional growth mode transition during the growth of Ga0.65In0.35As on GaAs(001) can be significantly increased by increasing the growth rate. This experimental finding is corroborated by a Monte Carlo simulation of this heteroepitaxial growth. Improved quantum well optical properties are demonstrated.
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Grandjean et al. (1994) studied this question.
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