The rectifying barrier of poly(dithienothiophene-dithienopyrrole) (pDTDP) conducting copolymer deposited on n-Si has been investigated. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were used to explore the junction properties. The results presented can be understood in terms of the thermionic emission and space charge limited current model. The pDTDP-Si contact barrier has a height of 0.21 eV from I-V measurements and 0.23 eV from C-V measurements.
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Campos et al. (1995) studied this question.
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