Metal-poly (p-phenylene) Schottky barriers, in which the metal and semiconductor are separated by a thin interfacial film, exhibit nearly ideal diode behaviour in the dark. The current-voltage characteristics have been studied in the range 20-300 degrees C and the current transport properties in the barriers are found to be in agreement with the diffusion theory of metal-semiconductor rectification.
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Campos et al. (1993) studied this question.
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