Noncontact minority-carrier lifetime measurement for magnetic field applied Czochralski silicon crystals

Minority-carrier recombination lifetime has been measured with a noncontact laser/microwave method for magnetic field applied Czochralski silicon crystals in the temperature range from 20 to 250 °C. The lifetime behavior in both as-grown and heat treated silicon crystals strongly depends on the thermal history of the samples. It is shown that the lifetime measurement is very sensitive to grown-in and thermally induced defects which cannot be detected by conventional infrared absorption spectroscopy or transmission electron microscopy.