Deformation-induced point defects in germanium

Using a transient capacitive method (deep-level transient spectroscopy), we have studied defects introduced into n-type germanium by plastic deformation at temperatures below 0·6T m (where T m is the melting temperature). From the annealing behaviour of a defect with a level at E c - 0·29 eV, we conclude that point-defect clouds surround the dislocation formed during plastic deformation, and that these anneal out at high temperatures.