Dense uniform arrays of site-controlled quantum dots grown in inverted pyramids

We report on the growth and optical properties of homogeneous, dense arrays of site-controlled, single GaAs/AlGaAs quantum dot (QD) heterostructures with periodicities as small as 300 nm. The samples were grown by organometallic chemical vapor deposition on (111)B GaAs substrates containing dense inverted pyramid recess patterns prepared by electron beam lithography and wet chemical etching. Low-temperature microphotoluminescence spectra of the samples show distinct luminescence from the QDs with 1–3 meV linewidth. Low-temperature cathodoluminescence spectrally resolved images reveal uniform emission energy within an ensemble of 900 QDs.