We propose a physical model that quantitatively describes the behavior of the dark count probability and single-photon quantum efficiency of avalanche diodes under conditions that allow these devices to be used for single-photon detection. The model shows analytically how various physical parameters such as dark current, dc gain, Geiger mode gain, carrier detrap time, pulse repetition rate, etc., can affect the dark count probability and single-photon quantum efficiency of a Geiger mode avalanche photodiode. The theory agrees well with the experimental results.
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Kang et al. (2003) studied this question.
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