Network representations of LIGBT structures for CAD of power integrated circuits

To enable computer-aided design (CAD) of power integrated circuits, physical models for lateral high-voltage/power (HV/P) devices, in particular lateral insulated-gate bipolar transistor (LIGBT) structures, are developed and implemented in SPICE. The models are charge-based, and, via regional partitioning, account for the unique features of HV/P devices unaccounted for in conventional equivalent-circuit models. The implementation of the models in the circuit simulator is flexible and allows these features (e.g. multidimensional carrier flow, conductivity modulation, latchup, transcapacitance) to be simulated without having to sacrifice much physics through excessive empiricism. Device measurement of specially designed test structures, supplemented with two-dimensional numerical device simulations, support the modeling methodology and the model parameter extraction.>