The dependence of open-circuit voltage on illumination level in p-n junction solar cells

Simple analytical dependencies of solar cell open-circuit voltage on illumination level, valid for high injection, are derived. The developments are guided and verified by exact computer-aided numerical simulations of silicon cells. The results are related to an easily measured device parameter, the uncompensated photocurrent, through the use of the principle of superposition. An advantage of p+-n over n+-p cells with respect to open-circuit voltage at high levels of illumination is predicted.