Rapidly Erasable Ambipolar SnO Charge-Trap Memory With Low Dynamic Energy Consumption

Charge-trap memories (CTMs) incorporating sputtered ambipolar SnO channels and Al2O3tunneling, charge-trapping, and blocking layers (BLs) by atomic layer deposition (ALD) have been fabricated. Leveraging the ambipolar SnO channel with balanced p-type and n-type conductivity, the CTMs exhibit complementary memory characteristics with low programming/erasing (P/E) voltages of 20/−20 V, complete erasure with high speed, achieving an electron memory window of 5.3 V and an extremely short electron erasing time of10^-3s, which is, to the best of our knowledge, one of the shortest erasing times among the reported CTMs. Due to the quick erasable capability, the ambipolar SnO CTMs exhibit a low channel dynamic-energy density of6× 10^-3J/cm2per P/E cycle, which is even much lower than that of the reported poly-Si CTM (8.2× 10^-1J/cm^2). Moreover, these CTMs demonstrate high retention stability, with only 39% electron loss projected over ten years. These results highlight the application potential of ambipolar SnO in future large-scale 3-D integrated nonvolatile memory systems.