A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

In this brief, we present a physics-based analytical model for 2-D electron gas densitynsin AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi levelEfandns. The model is developed by considering the variation ofEf, the first subbandE0, the second subbandE1, andnswith applied gate voltageVg. The proposed model is in very good agreement with numerical calculations.