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June 1, 2011Japanese Journal of Applied PhysicsOpen Access

Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts

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Authors

TNTakuma NanjoTMTsukasa MotoyaAIAkihumi Imai

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Nanjo et al. (2011) studied this question.

synapsesocial.com/papers/6a9620d0f03b077d86ee6fa1https://doi.org/10.7567/jjap.50.064101
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