In situ x-ray scattering has been used to study a growing film (ZnSe on GaAs) during organometallic vapor phase epitaxy. This first in situ study of non-ultrahigh-vacuum growth revealed a surprisingly stable and well-ordered p(2×{}1) reconstruction during growth despite the presence of organic-reaction by-products. Also, dramatic changes in the specular x-ray reflectivity were found while investigating transient kinetic effects during alternate source epitaxy. These results demonstrate the power of in situ x-ray-scattering studies in the characterization of these complex processes.
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Fuoss et al. (1989) studied this question.