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Fully coalesced Al0.93Ga0.07N films were demonstrated by metalorganic chemical vapor deposition on deep grooved SiC substrates. Lateral Al0.93Ga0.07N growth was achieved at low V/III ratios during growth. The deep grooves enabled coalescence despite of parasitic growth in the trenches. Dislocation reduction in the overgrown regions of the films was observed by transition electron microscopy and atomic force microscopy.
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Heikman et al. (2005) studied this question.
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