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Recent topics in the growth of group III nitrides by MOVPE are reviewed. The process of low-temperature deposition of the buffer layer and the effect of the low-temperature-deposited interlayer on the growth of AlGaN are discussed. The growth of AlGaN on grooved GaN and on substrates is reviewed. Finally, recent topics on the growth of In-containing alloys in terms of the future aspects of new devices are presented.
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Amano et al. (2001) studied this question.
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