Answers are grounded in this paper and cite their sources.
The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm−3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.
No takes yet. Share an insight, caveat, or question.
Ahrenkiel et al. (1988) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: