Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.
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Sheldon et al. (1982) studied this question.
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