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The behavior of Fe in semi-insulating InP substrates during growth by liquid-phase epitaxy (LPE) was studied using secondary-ion mass spectrometry and photoluminescence measurements in conjunction with ion implantation. The redistribution of Fe at the interface between the substrate and the layer follows diffusion theory. The experimentally determined diffusion coefficient D is 6.8×105 exp[-3.4 (eV)/kT]. Fe accumulates near the surface of the substrate during preheating in the H2 ambient. This accumulation cannot be explained by simple diffusion theory and could be influenced by thermal degradation of the surface.
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Holmes et al. (1981) studied this question.
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