The redistribution of the compensating dopants, iron or chromium, in semi‐insulating indium phosphide has been studied using secondary ion mass spectrometry. Annealing with silicon nitride encapsulation results in impurity accumulation within the first 1000Å of the surface followed by depletion extending to a depth of ∼1 μm. Profiles resulting from the implantation of "neutral" elements (He, B) exhibit accumulation at the surface and also accumulation at the projected range peak. The profiles are explained in terms of gettering of the compensating dopant to defect‐rich regions.
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Oberstar et al. (1981) studied this question.