Temperature dependence of the current-voltage characteristics of silicon MIS solar cells

Measurements on the dark I-V characteristics of Al-SiOx- (p-type) Si solar cells as a function of temperature have been used to elucidate one of the possible current conduction mechanisms in MIS solar cells. A good fit is obtained by using the diffusion current mechanism as described previously in our theory of MIS solar cells. There is little evidence in the data on our devices to support the thermionic emission model which is the alternate mode of operation proposed by other investigators.