This paper presents a new type of dynamic stress analyzer for microelectromechanical systems (MEMS) based on Raman spectroscopy. The technique uses a combination of high‐frequency modulation and Raman spectroscopic techniques; the dynamic stress analyzer is designed on the basis of the two techniques mentioned above, combined with signal multiplexing. The error of the analyzer is about 10 MPa. Using the analyzer, the dynamic stress at a certain point at the base of a microresonator was measured. The dynamic stress decreases in a linear fashion with increasing values of the driving voltage, and is sinusoidal when the resonator is driven by a sinusoidal signal. The result of the measurement is in agreement with the theory and indicates that this analyzer can perfectly meet the needs of dynamic stress measurement in MEMS devices.
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Xue et al. (2006) studied this question.
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