A Simple Model for Substrate Current Characteristics in Short-Channel Ultrathin-Film Metal-Oxide-Semiconductor Field-Effect Transistors by Separation by Implanted Oxygen

In this paper a simple and analytical closed-form expression is proposed for the substrate current of ultrathin-film metal-oxide-semiconductor field-effect transistors by separation by implanted oxygen (MOSFETs/SIMOX) to assist physical understanding and rapid SOI device design. The expression is based on an empirical consideration of the impact ionization phenomenon and the energy balance equation assisted by a two-dimensional simulation. The expression includes nonstationary energy transfer effects. The model successfully explains the experimental substrate current characteristics.