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An analytic model for high electric fields on the source side in lightly doped drain (LDD)-type MOSFETs is proposed. The present model explains consistently the dependence of the source field peak on various relevant process and device parameters. It is shown that the source peak plays a role in avalanche and hot-carrier phenomena. The model predictions are compared with the results of extensive 2-D simulations.>
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Orłowski et al. (1989) studied this question.
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