Answers are grounded in this paper and cite their sources.
We present a model for hot carrier transport which is implemented in the device simulator MINIMOS 3. A brief resume of the model is given. We present various results which were calculated with this new model. We show that the I-V characteristics of a MOSFET can be calculated from Leff= 10 µm down to Leff= 0.9 µm with one parameter set. Modifications of carrier and current distributions are presented that show how hot carrier effects tend to smooth these distributions. Implications are discussed how a self-consistent carrier temperature can be used to model impact ionization and oxide injection.
No takes yet. Share an insight, caveat, or question.
Hänsch et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: