Radiation-enhanced outdiffusion of xenon implanted in aluminum

Entrapment of 10–160-keV xenon implanted under UHV conditions in polycrystalline aluminum has been investigated by Rutherford backscattering. The saturation xenon distributions were found to be strongly affected by radiation-enhanced outdiffusion. Different from silicon the loss of xenon from near-surface regions of aluminum increases with increasing ion energy. The results are explained in terms of spike-activated diffusion.