What question did this study set out to answer?

Investigate the gettering behavior of Cu and Ni impurities by 2.3 MeV Si ion-implantation-induced defects in epitaxial silicon under various annealing conditions.

October 19, 1998Applied Physics Letters

Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon

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Authors

SKS. KoveshnikovTashkent State Technical University named after Islam Karimov OKOleg KononchukSoitec (France)

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Implication

Experimental study demonstrates dual-region gettering of copper and nickel in MeV ion-implanted silicon, indicating a segregation-driven defect capture mechanism.

Key Points

Investigate the gettering behavior of Cu and Ni impurities by 2.3 MeV Si ion-implantation-induced defects in epitaxial silicon under various annealing conditions.
Implanted epitaxial silicon with 2.3 MeV Si ions to generate defect profiles.
Evaluated metal impurity capture as a function of annealing temperature, duration, and cooling rate using secondary ion mass spectrometry (SIMS).
Secondary ion mass spectrometry revealed two distinct gettering regions corresponding to the projected range (Rp) and roughly half the projected range (Rp/2).
Metal capture occurred during high-temperature annealing in low-impurity samples, demonstrating a segregation-induced gettering mechanism.
Binding energies for both Cu and Ni were determined to be higher in the shallow Rp/2 defect region than in the Rp region.

Cite This Study

Koveshnikov et al. (1998) studied this question.

synapsesocial.com/papers/6a9642b9132cd8a75e577456 https://doi.org/10.1063/1.122455

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Implication

Experimental study demonstrates dual-region gettering of copper and nickel in MeV ion-implanted silicon, indicating a segregation-driven defect capture mechanism.

Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon

Discussion

Member takes

Implication

Key Points

Cite This Study

Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon

Discussion

Member takes

Implication

Key Points

Cite This Study

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