Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2

Vacancy-type defects were studied after high-energy self-implantation of Si and subsequent rapid thermal annealing by means of a depth-resolution enhanced positron beam technique. Two different types of open-volume defects were found at a depth of Rp/2 and Rp, respectively. The defect type at Rp/2 is an agglomeration of point defects containing vacancies. This defect getters diffusing copper atoms. The vacancy-type defect observed in a depth of Rp could be connected to the interstitial loops formed there. The positron annihilation parameters suggest that this detected defect is not decorated by diffusing copper atoms.