We consider hopping transport in a dilutely doped sheet of Si donors in GaAs. Samples are constructed as multiple {δ} layers, spaced significantly farther apart than the average, in-plane donor separation. In this system we have determined activation energies and studied the positive magnetoresistance effect quantitatively. We provide a detailed examination of the negative-magnetoresistance effect that stems from quantum interference of neighboring hopping paths.
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Ye et al. (1990) studied this question.
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