Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source

p - n junctions have been formed in lightly n-type (1017cm−3) bulk, single-crystal ZnO substrates by diffusion of P from a Cd3P2, arsenic and red phosphorous dopant source in a closed-ampoule system. The P incorporation depth was found to be ∼200nm after diffusion at 550°C for 30min, as determined by secondary ion mass spectrometry profiling. The resulting structures show rectification, with on-off current ratios of ∼70 at +3∕−5V. The forward current ideality factor was ⩾2, consistent with multiple current transport mechanisms present in the junction, such as defect-assisted tunneling and conventional carrier recombination in the space-charge region via midgap deep levels. The forward turn-on voltage, VF was ∼4V at 300K with a specific on-state resistance (RON) of ∼21mΩcm2. The activation energy of the forward current at low forward biases was ∼1.4eV. This is also consistent with carrier recombination in the space charge region via a midgap deep level.