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The author reports the effect of doping with 3d transition elements on the conductance of Al/Al oxide/Al and Al/Al oxide/Ag tunnel junctions. The conductance-voltage characteristics have been measured as a function of concentration of dopant, temperature and magnetic field. The doping lowers the conductance G(V=0) approximately linearly with concentration, and G(V) becomes 'vee' shaped over a wide voltage range and the sides of the 'vee' are steeper at higher concentrations. These effects are greater with the Al than the Ag functions.
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A. F. G. Wyatt (1974) studied this question.
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