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With the layer-dependent tunability of their optical band gap in the near-infrared (IR ) to visible spectrum, transition metal dichalcogenides (TMDs), including molybdenum disulfide (MoS2) and tungsten disulfide (WS2), exhibit strong light-matter interactions, making them suitable as absorber layers for optoelectronic devices. Currently, the WS2-based solar cells are fabricated via micromechanical/chemical exfoliation or transfer of two-dimensional (2-D) WS2layers onto conventional three-dimensional (3-D) bulk semiconductors, which poses a challenge for large-scale integrations and consequent device performances.
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Behura et al. (2017) studied this question.
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