Short wavelength bottom-emitting vertical cavitylasers fabricated using wafer bonding

Selectively oxidised 850 nm vertical cavity surface emitting laser diodes which emit through transparent n-type GaP and AlGaAs substrates are reported. The short wavelength bottom-emitting lasers are fabricated using a low temperature inert gas wafer fusion process. Compared to top-emitting lasers, the bottom-emitting lasers bonded to n-type AlGaAs substrates show comparable electrical characteristics, while lasers bonded to n-type GaP substrates exhibit higher series resistance and voltage.